| PART |
Description |
Maker |
| SML10SIC06YFIC |
DUAL SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
| SML10SIC06Y |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
| SML10SIC06SMDC |
SILICON CARBIDE (SiC) SCHOTTKY DIODE
|
Seme LAB
|
| IDD03SG60C |
3rd Generation thinQ!TM SiC Schottky Diode
3 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252
|
Infineon Technologies AG
|
| AM27C128 AM27C128-120 AM27C128-120DC AM27C128-120D |
112dB 192kHz 24-BIT SCH DAC
128 Kilobit (16 K x 8-Bit) CMOS EPROM
Octal D-Type Flip-Flops With Clear 20-PDIP 0 to 70
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 90 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 120 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 55 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 OTPROM, 90 ns, PDIP28
Quad 2-input exclusive-NOR gates with open collector outputs 14-SO 0 to 70 16K X 8 OTPROM, 120 ns, PDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 OTPROM, 120 ns, PQCC32
112dB 192kHz 24-BIT SCH DAC 一一二分92kHz4位三星援
Quad /S-/R latches 16-SOIC 0 to 70 一一二分92kHz4位三星援
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 250 ns, CDIP28
Triple 3-input positive-NOR gates 14-SOIC 0 to 70
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| MSICSN10060CA MSICSN10060CC MSICSN10060D MSICSS100 |
10A / 600V Silicon Carbide Dual Schottky Rectifier
|
Microsemi Corporation
|
| SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package
600V Silicon Carbide Ultrafast Schottky Diode
Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| STPSC606 STPSC606D STPSC606G-TR |
6 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| 0405SC-1000M MICROSEMIPOWERPRODUCTSGROUP-0405SC-10 |
SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 UHF BAND, Si, N-CHANNEL, RF POWER, JFET
1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT
|
Microsemi, Corp.
Microsemi Corporation
|
| SIDC24D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| SCH2080KE |
N-channel SiC power MOSFET co-packaged with SiC-SBD
|
Rohm
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
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